Publicaciones en las que colabora con Josep M. Montserrat (4)

2007

  1. Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, Núm. 1-2 SPEC. ISS., pp. 152-156

  2. Boron electrical activation in SOI compared to bulk Si substrates

    2007 Spanish Conference on Electron Devices, Proceedings

1995

  1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

1994

  1. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

    Semiconductor Science and Technology, Vol. 9, Núm. 9, pp. 1637-1648