Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Barcelona (6)

2022

  1. Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 42-48

  2. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

    Acta Materialia, Vol. 241

2018

  1. I ON Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

2007

  1. Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, Núm. 1-2 SPEC. ISS., pp. 152-156

  2. Boron electrical activation in SOI compared to bulk Si substrates

    2007 Spanish Conference on Electron Devices, Proceedings

1989

  1. Constant-capacitance deep-level optical spectroscopy

    Solid State Electronics, Vol. 32, Núm. 4, pp. 287-293