![Foto de Manuel Pedro](/img/nophoto.png)
Manuel Pedro
Avella Romero
Publicaciones en las que colabora con Manuel Pedro Avella Romero (20)
2012
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Analysis of the residuals in grave goods from the vaccaea era at the necropolis of "las ruedas" in pintia
Spectroscopy Letters, Vol. 45, Núm. 2, pp. 141-145
2010
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Light beam induced current mapping of mc-Si solar cells: Influence of grain boundaries and intragrain defects
Materials Research Society Symposium Proceedings
2009
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Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates
Superlattices and Microstructures, Vol. 45, Núm. 4-5, pp. 214-221
2007
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Hydrogen-free SiCN films obtained by electron cyclotron resonance plasma
Journal of the Electrochemical Society, Vol. 154, Núm. 4
2006
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Blue-cathodoluminescent layers synthesis by high-dose N+, C + and B+ SiO2 implantation
Journal of Luminescence, Vol. 117, Núm. 1, pp. 95-100
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InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides
Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 225-229
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InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
2005
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Compound clusters in silicon dioxide obtained by N+, C + and B+ high-dose ion implantation: Nature of the blue cathodoluminescence emission and relationship with the embedded phases
Physica Status Solidi C: Conferences
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Microscopic optical interferometry study of the cottrell atmospheres in Si-Doped GaAs
Recent Advances in Multidisciplinary Applied Physics (Elsevier Ltd), pp. 217-221
2003
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Photoluminescence and photocurrent mapping of Fe-doped InP wafers
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
2002
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Characterization of GaN/InGaN hetero-structures by SEM and CL
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
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Photocurrent and photoluminescence in Fe-doped InP
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
2001
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Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 197-201
1997
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Homogeneity of Fe-DOPED InP wafers using optical microprobes
Materials Science Forum, Vol. 258-263, Núm. PART 2, pp. 825-830
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Homogeneity of thermally annealed Fe-doped InP wafers
Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 233-237
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Study of the homogeneity of Fe-doped semiinsulating InP wafers
Materials Research Society Symposium - Proceedings
1996
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Photocurrent contrast in semi-insulating Fe-doped InP
Semiconductor Science and Technology, Vol. 11, Núm. 6, pp. 941-946
1994
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Bulk homogeneity of iron doped InP
Materials Research Society Symposium Proceedings
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Photocurrent study of Fe-doped semi-insulating InP
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 111-114
1993
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Characterization of the homogeneity of semi-insulating InP by the spatially resolved photocurrent
Materials Science and Engineering B, Vol. 20, Núm. 1-2, pp. 105-108