ANGEL CARMELO
PRIETO COLORADO
Forscher in der Zeit 1991-2022
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Universidad Politécnica de Madrid
Madrid, EspañaPublikationen in Zusammenarbeit mit Forschern von Universidad Politécnica de Madrid (22)
2018
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Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach
Journal of Applied Physics, Vol. 123, Núm. 11
2016
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Local electric field enhancement at the heterojunction of Si/SiGe axially heterostructured nanowires under laser illumination
Nanotechnology, Vol. 27, Núm. 45
2014
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Raman spectrum of Si nanowires: Temperature and phonon confinement effects
Applied Physics A: Materials Science and Processing, Vol. 114, Núm. 4, pp. 1321-1331
2013
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Interaction between a laser beam and semiconductor nanowires: Application to the Raman spectrum of Si nanowires
International Journal of Nanoparticles
2011
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Si and SixGe1-x NWs studied by Raman spectroscopy
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 4, pp. 1307-1310
2010
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Crystallization of amorphous Si 06Ge 04 nanoparticles embedded in SiO 2: Crystallinity versus compositional stability
Journal of Electronic Materials, Vol. 39, Núm. 8, pp. 1194-1202
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Micro-Raman spectroscopy of Si nanowires: Influence of diameter and temperature
Applied Physics Letters, Vol. 96, Núm. 1
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Raman spectroscopy study of group IV semiconductor nanowires
Physics Procedia
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SiGe nanowires grown by LPCVD: Morphological and structural analysis
Materials Research Society Symposium Proceedings
2008
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Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 147, Núm. 2-3, pp. 200-204
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UV Raman spectroscopy of group IV nanocrystals embedded in a SiO 2 matrix
Journal of Materials Science: Materials in Electronics
2007
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Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films
Nanotechnology, Vol. 18, Núm. 6
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Luminescence in multilayers of SiGe nanocrystals embedded in SiO 2
Materials Research Society Symposium Proceedings
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Optimization of the luminescence emission in nanocrystalline SiGe/SiO 2 multilayers
Physica Status Solidi (A) Applications and Materials Science
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Tailored deposition by LPCVD of non-stoichiometric Si oxides and their application in the formation of Si nanocrystals embedded in SiO2 by thermal annealing
Materials Research Society Symposium Proceedings
2006
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Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, Núm. 1-2 SPEC. ISS., pp. 306-309
2005
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Evolution of the luminescence spectrum during the dry and steam oxidation of SiGe films
Materials Research Society Symposium Proceedings
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Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Luminescence in Ge nanostructures formed by dry and wet oxidation of SiGe films
Proceedings of SPIE - The International Society for Optical Engineering
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Study of the oxidation of polycrystalline SiGe: Formation of Ge nanocrystals and their related luminescence
Materials Research Society Symposium Proceedings