Publicaciones en las que colabora con JUAN JOSE BARBOLLA SANCHO (20)

2005

  1. Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Noise simulation of continuous-time ΣΔ modulators

    AIP Conference Proceedings

  3. Nonlinearity correction for multibit ΔΣ DACs

    IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 52, Núm. 6, pp. 1033-1041

2004

  1. Low-power pipeline ADC for wireless LANs

    IEEE Journal of Solid-State Circuits, Vol. 39, Núm. 8, pp. 1338-1340

2003

  1. A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology

    Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209

  2. Atomistic analysis of defect evolution and transient enhanced diffusion in silicon

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1013-1018

  3. Microscopic description of the irradiation-induced amorphization in silicon

    Physical Review Letters, Vol. 91, Núm. 13

  4. Statistical 3D damage accumulation model for ion implant simulators

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

2002

  1. Design of a switched opamp-based bandpass filter in a 0.35 μm CMOS technology

    Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

2001

  1. Design of a CMOS fully differential switched-opamp for SC circuits at very low power supply voltages

    Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

1999

  1. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  2. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

1997

  1. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109

1995

  1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

  2. An improved molecular dynamics scheme for ion bombardment simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

1994

  1. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

    Semiconductor Science and Technology, Vol. 9, Núm. 9, pp. 1637-1648

  2. Saturation of generation-recombination current for very small recombination times

    Journal of Applied Physics, Vol. 76, Núm. 11, pp. 7384-7389

1993

  1. In-Diffusion and Annealing Kinetics of Palladium in Silicon

    Journal of the Electrochemical Society, Vol. 140, Núm. 3, pp. 868-870

1992

  1. Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs

    Journal of Applied Physics, Vol. 72, Núm. 2, pp. 525-530

1991

  1. Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy

    Journal of Applied Physics, Vol. 69, Núm. 8, pp. 4300-4305