SALVADOR
DUEÑAS CARAZO
CATEDRATICOS DE UNIVERSIDAD
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Universitat Autònoma de Barcelona
Barcelona, EspañaPublicaciones en colaboración con investigadores/as de Universitat Autònoma de Barcelona (15)
2024
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A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Materials Science in Semiconductor Processing, Vol. 169
2023
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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
Journal of Physics D: Applied Physics, Vol. 56, Núm. 36
2022
2021
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Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Standards for the Characterization of Endurance in Resistive Switching Devices
ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231
2018
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Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
Journal of Applied Physics, Vol. 124, Núm. 15
2017
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Experimental observation of negative susceptance in HfO2-based RRAM devices
IEEE Electron Device Letters, Vol. 38, Núm. 9, pp. 1216-1219
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Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices
Microelectronic Engineering, Vol. 178, pp. 30-33
2016
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Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors
ECS Transactions
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Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883
2015
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Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition
Thin Solid Films, Vol. 591, pp. 55-59
2014
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Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors
Microelectronics Reliability
2011
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Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
1995
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Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078
1994
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A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES