Argitalpenak (193) MARÍA HELENA CASTAN LANASPA argitalpenak

2025

  1. Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices

    Microelectronic Engineering, Vol. 296

  2. Reset transition in HfO2-Based memristors using a constant power signal

    Materials Science in Semiconductor Processing, Vol. 186

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Forming and Resistive Switching of HfO2-Based RRAM Devices at Cryogenic Temperature

    IEEE Electron Device Letters

  3. Impact of the temperature on the conductive filament morphology in HfO2-based RRAM

    Materials Letters, Vol. 357

  4. Neuromorphic Technology Insights in Spain

    Proceedings of the IEEE Conference on Nanotechnology

  5. On the Asymmetry of Resistive Switching Transitions

    Electronics (Switzerland), Vol. 13, Núm. 13

  6. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

    Materials Science in Semiconductor Processing, Vol. 179

2023

  1. Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  3. Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  4. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  5. Variability and power enhancement of current controlled resistive switching devices

    Microelectronic Engineering, Vol. 276

2022

  1. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  2. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  3. Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map

    Electronics (Switzerland), Vol. 11, Núm. 11

  4. Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux

    2022 11th International Conference on Modern Circuits and Systems Technologies, MOCAST 2022

  5. Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

    Nanomaterials, Vol. 12, Núm. 15

  6. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition

    Materials, Vol. 15, Núm. 3

  7. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194