MARIA
ABOY CEBRIAN
PROFESORES TITULARES DE UNIVERSIDAD
Instituto de Microelectrónica de Barcelona
Barcelona, EspañaPublicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Barcelona (5)
2022
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Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 42-48
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Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study
Acta Materialia, Vol. 241
2018
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I ON Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions
Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
2007
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Boron diffusion and activation in SOI and bulk Si: The role of the buried interface
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, Núm. 1-2 SPEC. ISS., pp. 152-156
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Boron electrical activation in SOI compared to bulk Si substrates
2007 Spanish Conference on Electron Devices, Proceedings