HECTOR
GARCIA GARCIA
PROFESORES TITULARES DE UNIVERSIDAD
University of Tartu
Tartu, EstoniaPublicaciones en colaboración con investigadores/as de University of Tartu (41)
2023
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Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
2022
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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
Electronics (Switzerland), Vol. 11, Núm. 3
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Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition
Materials, Vol. 15, Núm. 3
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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
Journal of Applied Physics, Vol. 132, Núm. 19
2021
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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
Solid-State Electronics, Vol. 186
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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
Solid-State Electronics, Vol. 183
2020
2018
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Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices
2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings
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Atomic layer deposition and properties of ZrO2/Fe2O3 thin films
Beilstein Journal of Nanotechnology, Vol. 9, Núm. 1, pp. 119-128
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The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications
Journal of Electronic Materials
2016
2015
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Atomic layer deposition and characterization of dysprosium-doped zirconium oxide thin films
Chemical Vapor Deposition, Vol. 21, Núm. 7-9, pp. 181-187
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Charge and current hysteresis in dysprosium-doped zirconium oxide thin films
Microelectronic Engineering, Vol. 147, pp. 55-58
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Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition
Thin Solid Films, Vol. 591, pp. 55-59
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Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics
Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015
2014
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Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors
Materials Research Society Symposium Proceedings
2009
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Electrical characterization of high-k based MIS capacitors using flat-band voltage transients
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393