Publikationen in Zusammenarbeit mit Forschern von Universitat Autònoma de Barcelona (12)

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

2023

  1. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

2022

  1. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

2021

  1. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

2018

  1. Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

    Journal of Applied Physics, Vol. 124, Núm. 15

2017

  1. Experimental observation of negative susceptance in HfO2-based RRAM devices

    IEEE Electron Device Letters, Vol. 38, Núm. 9, pp. 1216-1219

  2. Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices

    Microelectronic Engineering, Vol. 178, pp. 30-33

2016

  1. Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors

    ECS Transactions

  2. Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883

2015

  1. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Thin Solid Films, Vol. 591, pp. 55-59

2014

  1. Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

    Microelectronics Reliability

2011

  1. Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics