Publicaciones en las que colabora con Emilio Lora-Tamayo D'Ocón (8)

1995

  1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

1994

  1. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

    Semiconductor Science and Technology, Vol. 9, Núm. 9, pp. 1637-1648

1993

  1. Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon

    Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, Núm. PART 2, pp. 1362-1366

1992

  1. A study of metal-oxide-semiconductor capacitors fabricated on SF 6 and SF6+Cl2 reactive-ion-etched Si

    Journal of Applied Physics, Vol. 71, Núm. 6, pp. 2710-2716

  2. Characterization of the Electrical Damage due to Polysilicon RIE(SF6+ CL2Plasma) Etching

    Journal of the Electrochemical Society, Vol. 139, Núm. 1, pp. 193-195

1990

  1. Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

    Solid State Electronics, Vol. 33, Núm. 8, pp. 987-992

  2. Rie-induced damage in MOS structures

    Solid State Electronics, Vol. 33, Núm. 11, pp. 1419-1423

1989

  1. Constant-capacitance deep-level optical spectroscopy

    Solid State Electronics, Vol. 32, Núm. 4, pp. 287-293