Publicacións nas que colabora con IVAN SANTOS TEJIDO (10)

2005

  1. Atomistic analysis of annealing behavior of amorphous regions

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Atomistic modeling of ion beam induced amorphization in silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  3. Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  5. Molecular dynamics characterization of as-implanted damage in silicon

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  6. Morphology of as-implanted damage in silicon: A molecular dynamics study

    2005 Spanish Conference on Electron Devices, Proceedings

  7. Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

    2005 Spanish Conference on Electron Devices, Proceedings

  8. Study of the amorphous phase of silicon using molecular dynamics simulation techniques

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers

    Materials Research Society Symposium - Proceedings