JUAN JOSE
BARBOLLA SANCHO
Investigador en el periodo 1983-2005
MARIA LOURDES
ENRIQUEZ GIRAUDO
PROFESORES TITULARES DE UNIVERSIDAD
Publicaciones en las que colabora con MARIA LOURDES ENRIQUEZ GIRAUDO (20)
2005
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Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes
Proceedings of SPIE - The International Society for Optical Engineering
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Noise simulation of continuous-time ΣΔ modulators
AIP Conference Proceedings
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Nonlinearity correction for multibit ΔΣ DACs
IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 52, Núm. 6, pp. 1033-1041
2004
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Low-power pipeline ADC for wireless LANs
IEEE Journal of Solid-State Circuits, Vol. 39, Núm. 8, pp. 1338-1340
2003
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A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology
Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209
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Atomistic analysis of defect evolution and transient enhanced diffusion in silicon
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1013-1018
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Microscopic description of the irradiation-induced amorphization in silicon
Physical Review Letters, Vol. 91, Núm. 13
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Statistical 3D damage accumulation model for ion implant simulators
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2002
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Design of a switched opamp-based bandpass filter in a 0.35 μm CMOS technology
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
2001
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Design of a CMOS fully differential switched-opamp for SC circuits at very low power supply voltages
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
1999
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Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions
Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860
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Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions
Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980
1997
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Thermal emission processes of DX centres in AlxGa1-xAs:Si
Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109
1995
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Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078
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An improved molecular dynamics scheme for ion bombardment simulations
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11
1994
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Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique
Semiconductor Science and Technology, Vol. 9, Núm. 9, pp. 1637-1648
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Saturation of generation-recombination current for very small recombination times
Journal of Applied Physics, Vol. 76, Núm. 11, pp. 7384-7389
1993
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In-Diffusion and Annealing Kinetics of Palladium in Silicon
Journal of the Electrochemical Society, Vol. 140, Núm. 3, pp. 868-870
1992
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Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs
Journal of Applied Physics, Vol. 72, Núm. 2, pp. 525-530
1991
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Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy
Journal of Applied Physics, Vol. 69, Núm. 8, pp. 4300-4305