JUAN JOSE
BARBOLLA SANCHO
Investigador en el periodo 1983-2005
GERMAN
DIAZ GONZALEZ
Investigador en el periodo 1989-2007
Publicaciones en las que colabora con GERMAN DIAZ GONZALEZ (19)
2005
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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
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On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD
Microelectronics Reliability
2004
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Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70
2003
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A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378
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Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates
Materials Research Society Symposium - Proceedings
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Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates
MRS Proceedings, Vol. 786
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Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290
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Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, Núm. 8, pp. 4978-4981
2002
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Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures
Materials Research Society Symposium - Proceedings
2001
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C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface
Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 263-267
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Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, Núm. 7, pp. 4479-4484
2000
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Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, Núm. 11, pp. 6212-6215
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Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride A1/SiNx:H/InP and A1/SiNx:H/ in0.53Ga0.47As structures by DLTS and conductance transient techniques
Microelectronics Reliability, Vol. 40, Núm. 4-5, pp. 845-848
1999
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Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377
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Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced AI/SiNx:H/InP metal-insulator-semiconductor structures fabrication
Journal of Applied Physics, Vol. 86, Núm. 12, pp. 6924-6930
1998
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Conductance transients study of slow traps in Al/SiNx:H/Si and Al/SiNx:H/InP metal-insulator-semiconductor structures
Materials Research Society Symposium - Proceedings
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Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions
Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393
1997
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Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP
Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150
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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828