![Foto de GUILLERMO](/img/nophoto.png)
GUILLERMO
VINUESA SANZ
PROFESOR AYUDANTE DOCTOR
Publicaciones (30) Publicaciones de GUILLERMO VINUESA SANZ
2024
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A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Materials Science in Semiconductor Processing, Vol. 169
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Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
Materials Letters, Vol. 357
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On the Asymmetry of Resistive Switching Transitions
Electronics (Switzerland), Vol. 13, Núm. 13
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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
Materials Science in Semiconductor Processing, Vol. 179
2023
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Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
Journal of Physics D: Applied Physics, Vol. 56, Núm. 36
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Inhomogeneous HfO2layer growth at atomic layer deposition
Journal of Electrical Engineering, Vol. 74, Núm. 4, pp. 246-255
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Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Variability and power enhancement of current controlled resistive switching devices
Microelectronic Engineering, Vol. 276
2022
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An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
Chaos, Solitons and Fractals, Vol. 160
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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
Electronics (Switzerland), Vol. 11, Núm. 3
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Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition
Nanomaterials, Vol. 12, Núm. 15
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Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition
Materials, Vol. 15, Núm. 3
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Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
Solid-State Electronics, Vol. 194
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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
Journal of Applied Physics, Vol. 132, Núm. 19
2021
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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications
Solid-State Electronics, Vol. 186
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Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone
Nanotechnology, Vol. 32, Núm. 33
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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices
Solid-State Electronics, Vol. 183
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Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media
ACS Applied Nano Materials, Vol. 4, Núm. 5, pp. 5152-5163