PEDRO
CASTRILLO ROMON
Researcher in the period 1993-2013
National University of Singapore
Singapur, SingapurPublications in collaboration with researchers from National University of Singapore (7)
2008
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Comprehensive model of damage accumulation in silicon
Journal of Applied Physics, Vol. 103, Núm. 1
2006
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Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth
Materials Research Society Symposium Proceedings
2005
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Bimodal distribution of damage morphology generated by ion implantation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Comprehensive modeling of ion-implant amorphization in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
Journal of Applied Physics, Vol. 98, Núm. 4
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Ion-implant simulations: The effect of defect spatial correlation on damage accumulation
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Physically based modeling of dislocation loops in ion implantation processing in silicon
Materials Science and Engineering B: Solid-State Materials for Advanced Technology