GERMAN
DIAZ GONZALEZ
Ikertzailea 1989-2007 tartean
![Foto de Enrique](/img/nophoto.png)
Enrique
San Andres Serrano
Enrique San Andres Serrano-rekin lankidetzan egindako argitalpenak (26)
2008
-
Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
2007
-
High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
-
Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2
Applied Physics Letters, Vol. 91, Núm. 19
2006
-
Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis
Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699
2005
-
Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
-
On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD
Microelectronics Reliability
-
Oxygen to silicon ratio determination of SiOxHy thin films
Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235
-
Physical properties of high pressure reactively sputtered TiO2
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530
2004
-
Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices
Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 133-141
-
Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
Thin Solid Films
-
Compositional analysis of thin SiO xN y:H films by heavy-ion ERDA, standard RBS, EDX and AES: A comparison
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 217, Núm. 2, pp. 237-245
-
Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70
-
Influence of H on the composition and atomic concentrations of "N-rich" plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 95, Núm. 10, pp. 5373-5382
2003
-
A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378
-
Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469
-
Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates
Materials Research Society Symposium - Proceedings
-
Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates
MRS Proceedings, Vol. 786
-
Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290
-
Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029
-
Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938