PROYECTOS NACIONALES
Projekt TEC2011-27701 DIREMAS
DE LOS DEFECTOS MICROSCÓPICOS INDUCIDOS POR RADIACIÓN A SUS EFECTOS MACROSCÓPICOS A TRAVÉS DE LA SIMULACIÓN MULTI-ESCALA
Finanzier:
MICINN. MINISTERIO DE CIENCIA E INNOVACIÓN
date_range
Dauer von 01 von Januar von 2012 bis 31 von Dezember von 2015
(48 Monate)
euro
87.967,00 EUR
Geltungsbereich National. Mit dem Zeichen Öffentlich.
Bekanntmachung:
PROYECTOS DE INVESTIGACIÓN FUNDAMENTAL NO ORIENTADA. CONV. 2011
Unterprogramm:
PROYECTOS DE INVESTIGACIÓN FUNDAMENTAL. SUBPROGRAMA DE INVESTIGACIÓN FUNDAMENTAL NO ORIENTADA.
Forscher/innen
Publikationen im Zusammenhang mit dem Projekt (9)
Nach Typologie anzeigen2016
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Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations
Journal of Physics D: Applied Physics
2015
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Atomistic modeling of ion implantation technologies in silicon
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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A detailed approach for the classification and statistical analysis of irradiation induced defects
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2014
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Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon
Journal of Applied Physics
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Modeling of defects, dopant diffusion and clustering in silicon
Journal of Computational Electronics
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Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express
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Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces
Journal of Physics Condensed Matter