Publicaciones en las que colabora con Matteo Bosi (12)

2021

  1. Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 264

2013

  1. Structural characterization of 3C-SiC grown using methyltrichlorosilane

    Materials Science Forum

2012

  1. AFM morphological characterization and Raman study of germanium grown on (111)GaAs

    Surface Science, Vol. 606, Núm. 9-10, pp. 808-812

2010

  1. Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE

    Physica Status Solidi (C) Current Topics in Solid State Physics

2009

  1. Growth and characterization of 3C-SiC films for Micro Electro Mechanical Systems (MEMS) applications

    Crystal Growth and Design, Vol. 9, Núm. 11, pp. 4852-4859

  2. Strain evaluation in SiC MEMS test structures

    ECS Transactions

2006

  1. Characterisation of GaAsN layers grown by MOVPE

    Journal of Crystal Growth

  2. Origin of the fluctuations in the luminescence emission in InGaN quantum wells

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7

  3. The properties of GalnP/GaAs heterostructures as a function of growth temperature

    Journal De Physique. IV : JP

2004

  1. Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy

    Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 147-151

2003

  1. Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

2002

  1. Characterization of GaN/InGaN hetero-structures by SEM and CL

    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC