Publicaciones en las que colabora con R. Fornari (19)

2022

  1. Point defect localization and cathodoluminescence emission in undoped ϵ-Ga2O3

    Journal of Physics D: Applied Physics, Vol. 55, Núm. 29

2021

  1. Cathodoluminescence of undoped and Si-doped ɛ-Ga2O3 films

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 264

2010

  1. Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE

    Physica Status Solidi (C) Current Topics in Solid State Physics

2006

  1. Origin of the fluctuations in the luminescence emission in InGaN quantum wells

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7

2005

  1. Semi-insulating InP wafers obtained by Fe-diffusion

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

2004

  1. Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy

    Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 147-151

2003

  1. Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

2002

  1. Characterization of GaN/InGaN hetero-structures by SEM and CL

    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

  2. Photocurrent and photoluminescence in Fe-doped InP

    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

2000

  1. Homogeneity of thermally-annealed lightly Fe-doped SI InP

    Materials Research Society Symposium - Proceedings

  2. Uniformity of semi-insulating InP wafers obtained by Fe diffusion

    Journal of Applied Physics, Vol. 88, Núm. 9, pp. 5225-5229

1999

  1. Uniformity of Fe-diffused semi-insulating InP wafers

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 259-262

1998

  1. Annealing-related phenomena in bulk semi-insulating indium phosphide

    Defect and Diffusion Forum, Vol. 157-159, pp. 103-112

  2. Annealing-related phenomena in bulk semi-insulating indium phosphide

    Defect and Diffusion Forum

1997

  1. Homogeneity of Fe-DOPED InP wafers using optical microprobes

    Materials Science Forum, Vol. 258-263, Núm. PART 2, pp. 825-830

  2. Homogeneity of thermally annealed Fe-doped InP wafers

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 233-237

  3. Study of the homogeneity of Fe-doped semiinsulating InP wafers

    Materials Research Society Symposium - Proceedings

  4. Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing

    Journal of Applied Physics, Vol. 82, Núm. 8, pp. 3836-3845

1996

  1. Photocurrent contrast in semi-insulating Fe-doped InP

    Semiconductor Science and Technology, Vol. 11, Núm. 6, pp. 941-946