Publikationen, an denen er mitarbeitet ALFREDO TORRES PÉREZ (53)

2019

  1. A comparative analysis of the catastrophic degradation of AlGaAs/GaAs and AlGaAs/InGaAs laser diodes: Role of the strained QWs

    Proceedings of SPIE - The International Society for Optical Engineering

2018

  1. Mapping of mechanical strain induced by thin and narrow dielectric stripes on InP surfaces

    Optics Letters, Vol. 43, Núm. 15, pp. 3505-3508

  2. Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

    Journal of Electronic Materials

2017

  1. About the impact of the materials properties in the catastrophic degradation of high power GaAs based laser diodes

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes

    Microelectronics Reliability, Vol. 76-77, pp. 588-591

2016

  1. Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes

    Microelectronics Reliability, Vol. 64, pp. 627-630

  2. Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 34, Núm. 4

  3. GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission

    Applied Physics Letters, Vol. 108, Núm. 10

  4. Sequential description of the catastrophic optical damage of high power laser diodes

    Proceedings of SPIE - The International Society for Optical Engineering

2015

  1. Enhanced signal micro-raman study of SiGe nanowires and SiGe/Si nanowire axial heterojunctions grown using Au and Ga-Au catalysts

    Materials Research Society Symposium Proceedings

  2. Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour

    Microelectronics Reliability, Vol. 55, Núm. 9-10, pp. 1750-1753

  3. Mechanisms driving the catastrophic optical damage in high-power laser diodes

    Proceedings of SPIE - The International Society for Optical Engineering

2014

  1. Composition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes - Luminescence and SIMS

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials

  2. Raman spectroscopy in group IV Nanowires and nanowire axial heterostructures

    Materials Research Society Symposium Proceedings

  3. Raman spectroscopy in group IV nanowires and nanowire axial heterostructures

    Behavioral and Brain Sciences, Vol. 1659, Núm. 2

  4. Raman spectrum of Si nanowires: Temperature and phonon confinement effects

    Applied Physics A: Materials Science and Processing, Vol. 114, Núm. 4, pp. 1321-1331

2013

  1. Interaction between a laser beam and semiconductor nanowires: Application to the Raman spectrum of Si nanowires

    International Journal of Nanoparticles

  2. Intermixing in InAsP/InP quantum wells induced by dry etching processes

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  3. Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

    Applied Physics A: Materials Science and Processing, Vol. 113, Núm. 1, pp. 167-176

2012

  1. Microraman spectroscopy of Si nanowires: Influence of size

    Materials Science Forum