ESCUELA DE INGENIERIAS INDUSTRIALES
Centre
Instituto de Ciencias de la Tierra Jaume Almera
Barcelona, EspañaPublications en collaboration avec des chercheurs de Instituto de Ciencias de la Tierra Jaume Almera (16)
2016
-
Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods
Nanotechnology, Vol. 27, Núm. 9
2014
-
Electron density gradients in ammonothermally grown Si-doped GaN
Applied Physics Express, Vol. 7, Núm. 2
2012
-
Raman scattering by the E 2h and A 1(LO) phonons of In xGa 1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy
Journal of Applied Physics, Vol. 111, Núm. 6
2008
-
Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers
Semiconductor Science and Technology, Vol. 23, Núm. 10
-
Raman scattering of quasimodes in ZnO
Journal of Physics Condensed Matter, Vol. 20, Núm. 44
2007
-
Raman scattering characterization of implanted ZnO
Materials Research Society Symposium Proceedings
-
Study of the temperature dependence of E2 and Al(LO) modes in ZnO
Materials Research Society Symposium Proceedings
-
Temperature dependence of Raman scattering in ZnO
Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 16
2006
-
Origin of the fluctuations in the luminescence emission in InGaN quantum wells
Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7
-
Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire
Materials Research Society Symposium Proceedings
-
The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Journal of Applied Physics, Vol. 100, Núm. 4
2005
-
Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy
Physica Status Solidi (A) Applications and Materials Science
2004
-
Optical properties of epitaxial lateral overgrowth GaN structures studied by Raman and cathodoluminescence spectroscopies
Journal of Applied Physics, Vol. 96, Núm. 7, pp. 3639-3644
2002
-
Raman scattering by an inhomogeneous plasma in implanted semiconductors
Solid State Communications, Vol. 121, Núm. 11, pp. 609-613
2001
-
Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
1999
-
Characterization of the electron density in si+-implanted inp by means of raman scattering by lo-plasma coupled modes
Materials Research Society Symposium - Proceedings, Vol. 540, pp. 97-102