Publicacions en col·laboració amb investigadors/es de Universitat Autònoma de Barcelona (18)

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Neuromorphic Technology Insights in Spain

    Proceedings of the IEEE Conference on Nanotechnology

2023

  1. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

2022

  1. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

2021

  1. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231

2018

  1. Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

    Journal of Applied Physics, Vol. 124, Núm. 15

2017

  1. Experimental observation of negative susceptance in HfO2-based RRAM devices

    IEEE Electron Device Letters, Vol. 38, Núm. 9, pp. 1216-1219

  2. Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices

    Microelectronic Engineering, Vol. 178, pp. 30-33

2016

  1. Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors

    ECS Transactions

  2. Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883

2015

  1. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Thin Solid Films, Vol. 591, pp. 55-59

2014

  1. Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

    Microelectronics Reliability

2011

  1. Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

1995

  1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

1994

  1. A STUDY OF CHANNELING AND INDUCED DAMAGE IN BORON-IMPLANTED SILICON

    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES

1993

  1. Electrical characterization of MOS structures fabricated on SF6 and SF6 + C2CIF5 reactive ion etched silicon

    Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, Núm. PART 2, pp. 1362-1366

1992

  1. A study of metal-oxide-semiconductor capacitors fabricated on SF 6 and SF6+Cl2 reactive-ion-etched Si

    Journal of Applied Physics, Vol. 71, Núm. 6, pp. 2710-2716