Articles (11) Publications auxquelles un chercheur a participé

2004

  1. A 2D-TLM model for electromagnetic wave propagation in Tellegen media

    Microwave and Optical Technology Letters, Vol. 40, Núm. 5, pp. 438-441

  2. Boron diffusion in amorphous silicon and the role of fluorine

    Applied Physics Letters, Vol. 84, Núm. 21, pp. 4283-4285

  3. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

  4. Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

    Journal of Applied Physics, Vol. 96, Núm. 3, pp. 1365-1372

  5. FDTD modeling of transient microwave signals in dispersive and lossy bi-isotropic media

    IEEE Transactions on Microwave Theory and Techniques, Vol. 52, Núm. 3, pp. 773-784

  6. Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

    Applied Physics Letters, Vol. 84, Núm. 24, pp. 4962-4964

  7. Ion-beam-induced amorphization and recrystallization in silicon

    Journal of Applied Physics, Vol. 96, Núm. 11, pp. 5947-5976

  8. Low-power pipeline ADC for wireless LANs

    IEEE Journal of Solid-State Circuits, Vol. 39, Núm. 8, pp. 1338-1340

  9. Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 ° C

    Physical Review B - Condensed Matter and Materials Physics, Vol. 69, Núm. 12

  10. Stable high-order delta-sigma digital-to-analog converters

    IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 51, Núm. 1, pp. 200-205

  11. The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon

    Semiconductor Science and Technology, Vol. 19, Núm. 9, pp. 1141-1148