ETS INGENIEROS TELECOMUNICACION

1995

1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

2. An improved molecular dynamics scheme for ion bombardment simulations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

3. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

   Applied Physics Letters, pp. 409

4. Calorimetric quantification of the hydrogen-bond acidity of solvents and its relationship with solvent polarity

   Journal of the Chemical Society, Perkin Transactions 2, pp. 2301-2305

5. Characterisation of semiconductor structures by high resolution X-ray diffraction

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 1, pp. 72-79

6. Defects from implantation in silicon by linked Marlow-molecular dynamics calculations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182

7. Design and characterization of (111)B InGaAs/GaAs piezoelectric superlattices

   Semiconductor Science and Technology, Vol. 10, Núm. 8, pp. 1173-1176

8. Detailed computer simulation of ion implantation processes into crystals

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193

9. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

10. Instability and chaos in a two-coupler fiber ring resonator

    Fiber and Integrated Optics, Vol. 14, Núm. 4, pp. 331-335

11. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

12. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

13. Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210

14. Review of crystal diffraction and its application to focusing energetic gamma rays

    Experimental Astronomy, Vol. 6, Núm. 4, pp. 47-56

15. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395

16. Sistema neuronal difuso para gestión de documentos estructurados

    Procesamiento del lenguaje natural, Núm. 17, pp. 57-70

17. Stability of rational multistep approximations of holomorphic semigroups

    Mathematics of Computation, Vol. 64, Núm. 210, pp. 591-599

18. The heat capacity of proteins

    Proteins: Structure, Function, and Bioinformatics, Vol. 22, Núm. 4, pp. 404-412

19. Thermodynamic Mapping of the Inhibitor Site of the Aspartic Protease Endothiapepsin

    Journal of Molecular Biology, Vol. 252, Núm. 3, pp. 337-350

20. Towards an art based mathematical editor, that uses on-line handwritten symbol recognition

    Pattern Recognition, Vol. 28, Núm. 6, pp. 807-822