Publicacions (21) Publicacions en què ha participat algun/a investigador/a

1995

  1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

  2. An improved molecular dynamics scheme for ion bombardment simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

  3. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, pp. 409

  4. Calorimetric quantification of the hydrogen-bond acidity of solvents and its relationship with solvent polarity

    Journal of the Chemical Society, Perkin Transactions 2, pp. 2301-2305

  5. Characterisation of semiconductor structures by high resolution X-ray diffraction

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 1, pp. 72-79

  6. Defects from implantation in silicon by linked Marlow-molecular dynamics calculations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182

  7. Design and characterization of (111)B InGaAs/GaAs piezoelectric superlattices

    Semiconductor Science and Technology, Vol. 10, Núm. 8, pp. 1173-1176

  8. Detailed computer simulation of ion implantation processes into crystals

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193

  9. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

  10. Instability and chaos in a two-coupler fiber ring resonator

    Fiber and Integrated Optics, Vol. 14, Núm. 4, pp. 331-335

  11. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

  12. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

  13. Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210

  14. Review of crystal diffraction and its application to focusing energetic gamma rays

    Experimental Astronomy, Vol. 6, Núm. 4, pp. 47-56

  15. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395

  16. Sistema neuronal difuso para gestión de documentos estructurados

    Procesamiento del lenguaje natural, Núm. 17, pp. 57-70

  17. Stability of rational multistep approximations of holomorphic semigroups

    Mathematics of Computation, Vol. 64, Núm. 210, pp. 591-599

  18. The heat capacity of proteins

    Proteins: Structure, Function, and Bioinformatics, Vol. 22, Núm. 4, pp. 404-412

  19. Thermodynamic Mapping of the Inhibitor Site of the Aspartic Protease Endothiapepsin

    Journal of Molecular Biology, Vol. 252, Núm. 3, pp. 337-350

  20. Towards an art based mathematical editor, that uses on-line handwritten symbol recognition

    Pattern Recognition, Vol. 28, Núm. 6, pp. 807-822