Center
2ET
Publications (21) Publications in which a researcher has participated
1995
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Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078
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An improved molecular dynamics scheme for ion bombardment simulations
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11
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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
Applied Physics Letters, pp. 409
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Calorimetric quantification of the hydrogen-bond acidity of solvents and its relationship with solvent polarity
Journal of the Chemical Society, Perkin Transactions 2, pp. 2301-2305
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Characterisation of semiconductor structures by high resolution X-ray diffraction
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 1, pp. 72-79
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Defects from implantation in silicon by linked Marlow-molecular dynamics calculations
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182
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Design and characterization of (111)B InGaAs/GaAs piezoelectric superlattices
Semiconductor Science and Technology, Vol. 10, Núm. 8, pp. 1173-1176
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Detailed computer simulation of ion implantation processes into crystals
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193
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Diffusion and interactions of point defects in silicon: molecular dynamics simulations
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255
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Instability and chaos in a two-coupler fiber ring resonator
Fiber and Integrated Optics, Vol. 14, Núm. 4, pp. 331-335
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Low energy ion implantation simulation using a modified binary collision approximation code
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231
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Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304
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Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation
Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210
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Review of crystal diffraction and its application to focusing energetic gamma rays
Experimental Astronomy, Vol. 6, Núm. 4, pp. 47-56
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Simulation of cluster evaporation and transient enhanced diffusion in silicon
Applied Physics Letters, pp. 2395
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Sistema neuronal difuso para gestión de documentos estructurados
Procesamiento del lenguaje natural, Núm. 17, pp. 57-70
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Stability of rational multistep approximations of holomorphic semigroups
Mathematics of Computation, Vol. 64, Núm. 210, pp. 591-599
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The heat capacity of proteins
Proteins: Structure, Function, and Bioinformatics, Vol. 22, Núm. 4, pp. 404-412
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Thermodynamic Mapping of the Inhibitor Site of the Aspartic Protease Endothiapepsin
Journal of Molecular Biology, Vol. 252, Núm. 3, pp. 337-350
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Towards an art based mathematical editor, that uses on-line handwritten symbol recognition
Pattern Recognition, Vol. 28, Núm. 6, pp. 807-822