Centro
ETS INGENIEROS TELECOMUNICACION
Artículos (25) Publicaciones en las que ha participado algún/a investigador/a
1999
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Acelerador electrónico integrado: Aplicación en vehículos para discapacitados
Mundo electrónico, Núm. 295, pp. 58-61
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Activation and deactivation of implanted B in Si
Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664
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B cluster formation and dissolution in Si: A scenario based on atomistic modeling
Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659
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Backward Euler method for abstract time-dependent parabolic equations with variable domains
Numerische Mathematik, Vol. 82, Núm. 3, pp. 471-490
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Boron pileup and clustering in silicon-on-insulator films
Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085
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Cluster ripening and transient enhanced diffusion in silicon
Materials Science in Semiconductor Processing, Vol. 2, Núm. 4, pp. 369-376
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Continuum treatment of spatial correlation in damage annealing
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 153, Núm. 1-4, pp. 172-176
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Cost functions to estimate a posteriori probabilities in multiclass problems
IEEE Transactions on Neural Networks, Vol. 10, Núm. 3, pp. 645-656
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Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377
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Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions
Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860
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Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions
Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980
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Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418
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Energetics of self-interstitial clusters in si
Physical Review Letters, Vol. 82, Núm. 22, pp. 4460-4463
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Estimating complexity from EEG background activity of epileptic patient: Calculating correlation dimensions of chaotic dynamic attractors to compare EEGs of normal and epileptic subjects
IEEE Engineering in Medicine and Biology Magazine, Vol. 18, Núm. 6, pp. 73-79
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Fast algorithm for studying the evolution of optical solitons under perturbations
IEEE Transactions on Magnetics, Vol. 35, Núm. 3 PART 1, pp. 1558-1561
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La Necesidad de Indicadores Sociales y Económicos para el Estudio de la Evolución de la Sociedad de la Información
Revista de investigación económica y social de Castilla y León, Núm. 1, pp. 73-86
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MINERVA: multimedia on the INtERnet for virtual arts
International Conference on Multimedia Computing and Systems -Proceedings, Vol. 2, pp. 825-829
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Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301
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Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019
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Nonlinear analysis of time series generated by schizophrenic patients: Measuring the capacity to develop a random rhythm as a test for estimating cognitive-motor dysfunction
IEEE Engineering in Medicine and Biology Magazine, Vol. 18, Núm. 3, pp. 84-90