Articles (25) Publications auxquelles un chercheur a participé

1999

  1. Acelerador electrónico integrado: Aplicación en vehículos para discapacitados

    Mundo electrónico, Núm. 295, pp. 58-61

  2. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  3. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  4. Backward Euler method for abstract time-dependent parabolic equations with variable domains

    Numerische Mathematik, Vol. 82, Núm. 3, pp. 471-490

  5. Boron pileup and clustering in silicon-on-insulator films

    Applied Physics Letters, Vol. 75, Núm. 8, pp. 1083-1085

  6. Cluster ripening and transient enhanced diffusion in silicon

    Materials Science in Semiconductor Processing, Vol. 2, Núm. 4, pp. 369-376

  7. Continuum treatment of spatial correlation in damage annealing

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 153, Núm. 1-4, pp. 172-176

  8. Cost functions to estimate a posteriori probabilities in multiclass problems

    IEEE Transactions on Neural Networks, Vol. 10, Núm. 3, pp. 645-656

  9. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

  10. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  11. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

  12. Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418

  13. Energetics of self-interstitial clusters in si

    Physical Review Letters, Vol. 82, Núm. 22, pp. 4460-4463

  14. Estimating complexity from EEG background activity of epileptic patient: Calculating correlation dimensions of chaotic dynamic attractors to compare EEGs of normal and epileptic subjects

    IEEE Engineering in Medicine and Biology Magazine, Vol. 18, Núm. 6, pp. 73-79

  15. Fast algorithm for studying the evolution of optical solitons under perturbations

    IEEE Transactions on Magnetics, Vol. 35, Núm. 3 PART 1, pp. 1558-1561

  16. La Necesidad de Indicadores Sociales y Económicos para el Estudio de la Evolución de la Sociedad de la Información

    Revista de investigación económica y social de Castilla y León, Núm. 1, pp. 73-86

  17. MINERVA: multimedia on the INtERnet for virtual arts

    International Conference on Multimedia Computing and Systems -Proceedings, Vol. 2, pp. 825-829

  18. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

    Applied Physics Letters, Vol. 74, Núm. 9, pp. 1299-1301

  19. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

  20. Nonlinear analysis of time series generated by schizophrenic patients: Measuring the capacity to develop a random rhythm as a test for estimating cognitive-motor dysfunction

    IEEE Engineering in Medicine and Biology Magazine, Vol. 18, Núm. 3, pp. 84-90