ETS INGENIEROS TELECOMUNICACION

1995

1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

2. An improved molecular dynamics scheme for ion bombardment simulations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

3. Analysis and application of the store neural model in recognizing handwritted symbols

   Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

4. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

   Applied Physics Letters, pp. 409

5. Calorimetric quantification of the hydrogen-bond acidity of solvents and its relationship with solvent polarity

   Journal of the Chemical Society, Perkin Transactions 2, pp. 2301-2305

6. Characterisation of semiconductor structures by high resolution X-ray diffraction

   Materials Science and Technology (United Kingdom), Vol. 11, Núm. 1, pp. 72-79

7. Defects from implantation in silicon by linked Marlow-molecular dynamics calculations

   Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 180-182

8. Design and characterization of (111)B InGaAs/GaAs piezoelectric superlattices

   Semiconductor Science and Technology, Vol. 10, Núm. 8, pp. 1173-1176

9. Design of vertical power MOSFETs in SiC

   Proceedings of the International Conference on Microelectronics

10. Detailed computer simulation of ion implantation processes into crystals

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193

11. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

12. Instability and chaos in a two-coupler fiber ring resonator

    Fiber and Integrated Optics, Vol. 14, Núm. 4, pp. 331-335

13. Ion implantation and transient enhanced diffusion

    Technical Digest - International Electron Devices Meeting

14. La contribución de las pequeñas y medianas empresas al proceso de desarrollo regional de Castilla y León

    Valladolid : Secretariado de Publicaciones e Intercambio Científico, Universidad de Valladolid, 1995

15. La unión económica y monetaria y la competitividad del sector industrial en Castilla y León

    Consejería de Economía y Hacienda

16. Low energy ion implantation simulation using a modified binary collision approximation code

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 228-231

17. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

18. Point defect accumulation in silicon irradiated by energetic particles: A molecular dynamics simulation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 207-210

19. Review of crystal diffraction and its application to focusing energetic gamma rays

    Experimental Astronomy, Vol. 6, Núm. 4, pp. 47-56

20. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395