Atomistic analysis of defect evolution and transient enhanced diffusion in silicon

  1. Aboy, M.
  2. Pelaz, L.
  3. Marqués, L.A.
  4. Enriquez, L.
  5. Barbolla, J.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2003

Volumen: 94

Número: 2

Pages: 1013-1018

Type: Article

DOI: 10.1063/1.1586990 GOOGLE SCHOLAR
La source de données: Scopus