Publications dans lesquelles il/elle collabore avec SALVADOR DUEÑAS CARAZO (17)

1999

  1. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

  2. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  3. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

  4. Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418

1998

  1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

    Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393

1997

  1. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

    Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150

  2. Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345

  3. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

    Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828

  4. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109

1996

  1. Determination of three-dimensional deep level defect distribution by capacitance-voltage transient technique (CVTT)

    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995

  2. Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

    Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315

1995

  1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078

1994

  1. Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

    Semiconductor Science and Technology, Vol. 9, Núm. 9, pp. 1637-1648

1992

  1. Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs

    Journal of Applied Physics, Vol. 72, Núm. 2, pp. 525-530

1991

  1. Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy

    Journal of Applied Physics, Vol. 69, Núm. 8, pp. 4300-4305

1989

  1. Constant-capacitance deep-level optical spectroscopy

    Solid State Electronics, Vol. 32, Núm. 4, pp. 287-293

1987

  1. Optical admittance spectroscopy: A new method for deep level characterization

    Journal of Applied Physics, Vol. 61, Núm. 7, pp. 2541-2545