MARTIN JARAIZ MALDONADO-rekin lankidetzan egindako argitalpenak (7)

2001

  1. Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

1997

  1. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

    Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494

  2. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1996

  1. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159

1995

  1. An improved molecular dynamics scheme for ion bombardment simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 7-11

  2. Detailed computer simulation of ion implantation processes into crystals

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1191-1193

  3. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304