Publicaciones en las que colabora con Kaupo Kukli (48)

2023

  1. Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  3. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

2022

  1. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  2. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition

    Materials, Vol. 15, Núm. 3

  3. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

  2. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

    Solid-State Electronics, Vol. 183

2020

  1. Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

    ECS Transactions

2018

  1. Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

    2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings

  2. Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

    Beilstein Journal of Nanotechnology, Vol. 9, Núm. 1, pp. 119-128

  3. The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

    Journal of Electronic Materials

2016

  1. A complete suite of experimental techniques for electrical characterization of conventional and incoming high-k dielectric-based devices

    ECS Transactions

2015

  1. Atomic layer deposition and characterization of dysprosium-doped zirconium oxide thin films

    Chemical Vapor Deposition, Vol. 21, Núm. 7-9, pp. 181-187

  2. Charge and current hysteresis in dysprosium-doped zirconium oxide thin films

    Microelectronic Engineering, Vol. 147, pp. 55-58

  3. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Thin Solid Films, Vol. 591, pp. 55-59

  4. Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

2014

  1. Resistive switching behavior and electrical properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

    Materials Research Society Symposium Proceedings

  2. Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

    Microelectronics Reliability

2013

  1. Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors

    Semiconductor Science and Technology, Vol. 28, Núm. 5