JUAN JOSE
BARBOLLA SANCHO
Investigador en el periodo 1983-2005
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University of Helsinki
Helsinki, FinlandiaPublicaciones en colaboración con investigadores/as de University of Helsinki (7)
2005
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A comparative study of atomic layer deposited advanced high-k dielectrics
2005 Spanish Conference on Electron Devices, Proceedings
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Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates
Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229
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Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application
2005 Spanish Conference on Electron Devices, Proceedings
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Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition
Microelectronics Reliability
2004
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Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon
Journal of Applied Physics, Vol. 96, Núm. 3, pp. 1365-1372
2003
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Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films
Solid-State Electronics
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On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2, Ta2O5 and Nb 2O5-Ta2O5-Nb2O 5 dielectric thin films
Materials Research Society Symposium - Proceedings