Publicacións en colaboración con investigadores/as de AT and T Bell Laboratories (16)

2006

  1. A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers

    IEEE Journal of Solid-State Circuits, Vol. 41, Núm. 2, pp. 339-350

2001

  1. Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  2. DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films

    Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 317-321

  3. Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: An inexpensive and thermally stable high k dielectric

    Solid-State Electronics, Vol. 45, Núm. 8, pp. 1441-1450

2000

  1. Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress

    Microelectronics Reliability, Vol. 40, Núm. 4-5, pp. 659-662

  2. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  3. Fabrication of ta2o5 thin films by anodic oxidation of tantalum nitride and tantalum suicide: growing mechanisms, electrical characterization and ulsi m-i-m capacitor performances

    Materials Research Society Symposium - Proceedings, Vol. 567, pp. 371-378

  4. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

  5. Use of anodic tantalum pentoxide for high-density capacitor fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 379-384

1998

  1. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

1997

  1. Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345

  2. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

    Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828

  3. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1996

  1. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159