JOSE EMILIANO RUBIO GARCIA-rekin lankidetzan egindako argitalpenak (10)

2000

  1. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

1998

  1. Monte Carlo atomistic simulation of polycrystalline aluminum deposition

    Materials Research Society Symposium - Proceedings

1997

  1. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

    Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494

  2. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1995

  1. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304

1993

  1. Computer simulation of point-defect distributions generated by ion implantation

    Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, Núm. PART 1, pp. 172-175

  2. In-Diffusion and Annealing Kinetics of Palladium in Silicon

    Journal of the Electrochemical Society, Vol. 140, Núm. 3, pp. 868-870

1991

  1. Optical capture cross sections of palladium in silicon

    Journal of Applied Physics, Vol. 69, Núm. 1, pp. 298-301

1989

  1. Constant-capacitance deep-level optical spectroscopy

    Solid State Electronics, Vol. 32, Núm. 4, pp. 287-293

1987

  1. Optical admittance spectroscopy: A new method for deep level characterization

    Journal of Applied Physics, Vol. 61, Núm. 7, pp. 2541-2545