LUIS ALBERTO
BAILON VEGA
Investigador en el periodo 1981-2016
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Instituto de Microelectrónica de Barcelona
Barcelona, EspañaPublicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Barcelona (10)
2016
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Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors
ECS Transactions
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Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883
2015
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Hole trap distribution on 2 MeV electron irradiated high-k dielectrics
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, Núm. 3
2013
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2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon
Thin Solid Films, Vol. 534, pp. 482-487
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Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 31, Núm. 1
2011
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Electron irradiation effects on atomic layer deposited high-k gate dielectrics
ECS Transactions
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Negative-resistance effect in Al2O3 based and nanolaminated MIS structures
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
1990
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Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance
Solid State Electronics, Vol. 33, Núm. 8, pp. 987-992
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Rie-induced damage in MOS structures
Solid State Electronics, Vol. 33, Núm. 11, pp. 1419-1423
1989
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Constant-capacitance deep-level optical spectroscopy
Solid State Electronics, Vol. 32, Núm. 4, pp. 287-293