Publicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Barcelona (10)

2016

  1. Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors

    ECS Transactions

  2. Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883

2015

  1. Hole trap distribution on 2 MeV electron irradiated high-k dielectrics

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, Núm. 3

2013

  1. 2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

    Thin Solid Films, Vol. 534, pp. 482-487

  2. Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 31, Núm. 1

2011

  1. Electron irradiation effects on atomic layer deposited high-k gate dielectrics

    ECS Transactions

  2. Negative-resistance effect in Al2O3 based and nanolaminated MIS structures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

1990

  1. Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

    Solid State Electronics, Vol. 33, Núm. 8, pp. 987-992

  2. Rie-induced damage in MOS structures

    Solid State Electronics, Vol. 33, Núm. 11, pp. 1419-1423

1989

  1. Constant-capacitance deep-level optical spectroscopy

    Solid State Electronics, Vol. 32, Núm. 4, pp. 287-293