Publicaciones en las que colabora con Angel M. Ardila (10)

2012

  1. Influence of different surface treatments on multicrystalline silicon wafers for defect characterization by LBIC

    Journal of Materials Science, Vol. 47, Núm. 14, pp. 5470-5476

2004

  1. Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers

    Journal of Physics Condensed Matter

2003

  1. Optical and morphological characteristics of LP MOVPE grown lattice matched GaInP/GaAs heterostructures

    Physica Status Solidi (A) Applied Research

  2. Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence

    Materials Research Society Symposium - Proceedings

2002

  1. Doping profiles of n-type GaAs layers grown on Si by the conformal method

    Materials Research Society Symposium - Proceedings, Vol. 692, pp. 417-422

  2. Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)

    Journal of Materials Research, Vol. 17, Núm. 6, pp. 1341-1349

  3. Properties of AlGaAs layers grown on Si by the conformal method

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5045-5050

2001

  1. Self-doping near the seed/layer interface in conformal GaAs layers grown on Si

    Applied Physics Letters, Vol. 79, Núm. 9, pp. 1270-1272