ESCUELA DE INGENIERIAS INDUSTRIALES
Zentrum
University of Helsinki
Helsinki, FinlandiaPublikationen in Zusammenarbeit mit Forschern von University of Helsinki (18)
2018
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Tailoring the Structure and Morphology of Low-Molecular-Weight Cellulose Produced during Supercritical Water Hydrolysis
ACS Sustainable Chemistry and Engineering, Vol. 6, Núm. 12, pp. 16959-16967
2011
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Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride
Physical Review B - Condensed Matter and Materials Physics, Vol. 83, Núm. 8
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Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
2010
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Adduct formed by chromium trioxide and zwitterionic quinolinic acid
Central European Journal of Chemistry, Vol. 8, Núm. 3, pp. 486-493
2009
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Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors
Microelectronic Engineering, Vol. 86, Núm. 7-9, pp. 1689-1691
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Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Electrical characterization of high-k based MIS capacitors using flat-band voltage transients
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393
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Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420
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Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors
Journal of the Electrochemical Society, Vol. 155, Núm. 11
2007
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Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics
Journal of the Electrochemical Society, Vol. 154, Núm. 10
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Hydrogen storage in ammonia triborane: Properties and behavior of the chemical bonds
Inorganic Chemistry Communications, Vol. 10, Núm. 10, pp. 1229-1232
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Study of atomic layer deposited gadolinium oxide thin films on silicon
Materials Research Society Symposium Proceedings
2000
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Chemical bonding in hypervalent molecules revised. 3. Application of the atoms in molecules theory to Y3X-CH2 (X = N, P, or As; Y = H or F) and H2X-CH2 (X = O, S, or Se) ylides
Journal of the American Chemical Society, Vol. 122, Núm. 6, pp. 1144-1149
1999
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Chemical bonding in hypervalent molecules revised. 2. Application of the atoms in molecules theory to Y2XZ and Y2XZ2 (Y = H, F, CH3; X = O, S, Se; Z = O, S) compounds
Journal of the American Chemical Society, Vol. 121, Núm. 13, pp. 3156-3164
1998
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Chemical bonding in hypervalent molecules revised. Application of the Atoms in Molecules Theory to Y3 X and Y3 XZ (Y = H or CH3; X = N, P or As; Z = O or S) compounds
Journal of the American Chemical Society, Vol. 120, Núm. 33, pp. 8461-8471