ESCUELA DE INGENIERIAS INDUSTRIALES
Centre
Consiglio Nazionale delle Ricerche
Roma, ItaliaPublications en collaboration avec des chercheurs de Consiglio Nazionale delle Ricerche (39)
2023
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Raman spectroscopy, assisted by X-ray fluorescence and laser-induced breakdown spectroscopy, to characterise original and altered mineral phases in the NWA 2975 Martian shergottite
Journal of Raman Spectroscopy, Vol. 54, Núm. 11, pp. 1233-1247
2020
2015
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Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour
Microelectronics Reliability, Vol. 55, Núm. 9-10, pp. 1750-1753
2013
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Quantitative analysis of scanning tunneling microscopy images of mixed-ligand-functionalized nanoparticles
Langmuir, Vol. 29, Núm. 45, pp. 13723-13734
2011
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Communication: Are metallic glasses different from other glasses? A closer look at their high frequency dynamics
Journal of Chemical Physics, Vol. 135, Núm. 10
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Surface-enhanced fluorescence within a metal nanoparticle array: The role of solvent and plasmon couplings
Journal of Physical Chemistry C, Vol. 115, Núm. 13, pp. 5450-5460
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Understanding dielectric matrix effects on metal nanoparticle plasmons by the classical theory of solvation
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
2010
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Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE
Physica Status Solidi (C) Current Topics in Solid State Physics
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Quantum mechanical approach to solvent effects on the optical properties of metal nanoparticles and their efficiency as excitation energy transfer acceptors
Journal of Physical Chemistry C, Vol. 114, Núm. 3, pp. 1553-1561
2009
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Growth and characterization of 3C-SiC films for Micro Electro Mechanical Systems (MEMS) applications
Crystal Growth and Design, Vol. 9, Núm. 11, pp. 4852-4859
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Strain evaluation in SiC MEMS test structures
ECS Transactions
2008
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DuMond analysis of bending in single crystals by Laue diffraction using σ-π Polarization geometry
Journal of Applied Crystallography, Vol. 41, Núm. 6, pp. 1053-1056
2006
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Characterisation of GaAsN layers grown by MOVPE
Journal of Crystal Growth
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Origin of the fluctuations in the luminescence emission in InGaN quantum wells
Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7
2005
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Microscopic optical interferometry study of the cottrell atmospheres in Si-Doped GaAs
Recent Advances in Multidisciplinary Applied Physics (Elsevier Ltd), pp. 217-221
2004
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Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy
Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 147-151
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Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures
EPJ Applied Physics
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Optical and structural characterization of self-organized stacked GaN/AiN quantum dots
Journal of Physics Condensed Matter
2003
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Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
2002
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Characterization of GaN/InGaN hetero-structures by SEM and CL
IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC