Publicaciones en colaboración con investigadores/as de University of Tartu (45)

2023

  1. Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  2. Inhomogeneous HfO2layer growth at atomic layer deposition

    Journal of Electrical Engineering, Vol. 74, Núm. 4, pp. 246-255

  3. Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  4. Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

2022

  1. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  2. Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

    Nanomaterials, Vol. 12, Núm. 15

  3. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition

    Materials, Vol. 15, Núm. 3

  4. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

    Solid-State Electronics, Vol. 186

  2. Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

    Nanotechnology, Vol. 32, Núm. 33

  3. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

    Solid-State Electronics, Vol. 183

  4. Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

    ACS Applied Nano Materials, Vol. 4, Núm. 5, pp. 5152-5163

2020

  1. Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

    ECS Transactions

2018

  1. Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

    2017 32nd Conference on Design of Circuits and Integrated Systems, DCIS 2017 - Proceedings

  2. Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

    Beilstein Journal of Nanotechnology, Vol. 9, Núm. 1, pp. 119-128

  3. The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications

    Journal of Electronic Materials

2016

  1. A complete suite of experimental techniques for electrical characterization of conventional and incoming high-k dielectric-based devices

    ECS Transactions

2015

  1. Atomic layer deposition and characterization of dysprosium-doped zirconium oxide thin films

    Chemical Vapor Deposition, Vol. 21, Núm. 7-9, pp. 181-187

  2. Charge and current hysteresis in dysprosium-doped zirconium oxide thin films

    Microelectronic Engineering, Vol. 147, pp. 55-58

  3. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Thin Solid Films, Vol. 591, pp. 55-59