Publications in collaboration with researchers from Instituto de Microelectrónica de Barcelona (30)

2023

  1. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  2. Variability and power enhancement of current controlled resistive switching devices

    Microelectronic Engineering, Vol. 276

2022

  1. An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices

    Chaos, Solitons and Fractals, Vol. 160

  2. Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 512, pp. 42-48

  3. Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

    Electronics (Switzerland), Vol. 11, Núm. 3

  4. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

    Acta Materialia, Vol. 241

  5. Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

    Solid-State Electronics, Vol. 194

  6. Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction

    Journal of Applied Physics, Vol. 132, Núm. 19

2021

  1. Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: Programming based on an external capacitor discharge

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

    Electronics (Switzerland), Vol. 10, Núm. 22

  3. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  4. Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

    Solid-State Electronics, Vol. 183

2020

  1. Single and complex devices on three topological configurations of HfO2 based RRAM

    LAEDC 2020 - Latin American Electron Devices Conference

2018

  1. I ON Degradation in Si Devices in Harsh Radiation Environments: Modeling of Damage-Dopant Interactions

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

    Journal of Electronic Materials

2017

  1. A physically based model for resistive memories including a detailed temperature and variability description

    Microelectronic Engineering, Vol. 178, pp. 26-29

  2. Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

    2017 Spanish Conference on Electron Devices, CDE 2017

  3. Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices

    Microelectronic Engineering, Vol. 178, pp. 30-33

2016

  1. Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors

    ECS Transactions

  2. Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883