Publications in collaboration with researchers from Philips Research Eindhoven (25)


  1. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

  2. Evolution of fluorine and boron profiles during annealing in crystalline Si

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, Núm. 1, pp. 377-381

  3. F+ implants in crystalline Si: The Si interstitial contribution

    Materials Research Society Symposium Proceedings

  4. Si interstitial contribution of F+ implants in crystalline Si

    Journal of Applied Physics, Vol. 103, Núm. 9


  1. Boron diffusion in amorphous silicon and the role of fluorine

    Applied Physics Letters, Vol. 84, Núm. 21, pp. 4283-4285

  2. Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 ° C

    Physical Review B - Condensed Matter and Materials Physics, Vol. 69, Núm. 12

  3. The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology


  1. Dopant redistribution effects in preamorphized silicon during low temperature annealing

    Technical Digest - International Electron Devices Meeting