Publicaciones en las que colabora con JUAN IGNACIO JIMENEZ LOPEZ (53)

2020

  1. Daylight luminescence system for silicon solar panels based on a bias switching method

    Energy Science and Engineering, Vol. 8, Núm. 11, pp. 3839-3853

  2. Electrical Activity of Crystal Defects in Multicrystalline Si

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5091-5096

2019

  1. Influence of Large Periods of DC Current Injection in c-Si Photovoltaic Panels

    Proceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition

2017

  1. Implementation of a Friendly Daylight Electroluminescence System for the Inspection of Solar PV Panels

    33rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2017)

2013

  1. Low-cost system for full-wafer photoluminescence characterization of photovoltaic silicon

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  2. Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2011

  1. Study of the crystal features of mc-Si PV cells by laser beam induced current (LBIC)

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 4, pp. 1330-1333

2009

  1. Light Reflectivity-Coupled LBIC Mapping for Multicrystalline Si-Based PV Cells

    24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany

  2. Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates

    Superlattices and Microstructures, Vol. 45, Núm. 4-5, pp. 214-221

2007

  1. Hydrogen-free SiCN films obtained by electron cyclotron resonance plasma

    Journal of the Electrochemical Society, Vol. 154, Núm. 4

2006

  1. Blue-cathodoluminescent layers synthesis by high-dose N+, C + and B+ SiO2 implantation

    Journal of Luminescence, Vol. 117, Núm. 1, pp. 95-100

  2. InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 225-229