Publikationen, an denen er mitarbeitet M. Leskelä (11)

2011

  1. Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  2. Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

2009

  1. Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors

    Microelectronic Engineering, Vol. 86, Núm. 7-9, pp. 1689-1691

  2. Electrical characterization of ZrO2-based MIS structures with highly doped Si substrates

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Electrical characterization of high-k based MIS capacitors using flat-band voltage transients

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 389-393

  5. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, Núm. 1, pp. 416-420

  6. Study of atomic layer deposited zirconium oxide thin films by using mono-cyclopentadienyl based precursors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Comparative study of flatband voltage transients on high-k dielectric-based metal-insulator-semiconductor capacitors

    Journal of the Electrochemical Society, Vol. 155, Núm. 11

2007

  1. Electrical properties of atomic-layer-deposited thin gadolinium oxide high- k gate dielectrics

    Journal of the Electrochemical Society, Vol. 154, Núm. 10

  2. Study of atomic layer deposited gadolinium oxide thin films on silicon

    Materials Research Society Symposium Proceedings