Publicaciones en las que colabora con Ignacio Mártil de la Plaza (29)

2016

  1. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

    Nanoscale Research Letters, Vol. 11, Núm. 1

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

2009

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

2007

  1. Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics

    Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351

2005

  1. A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051

  2. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  3. On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD

    Microelectronics Reliability

2004

  1. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  2. Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

    Materials Research Society Symposium - Proceedings

  3. Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

    MRS Proceedings, Vol. 786

  4. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290

  5. Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, Núm. 8, pp. 4978-4981

2002

  1. Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures

    Materials Research Society Symposium - Proceedings

2001

  1. C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface

    Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 263-267

  2. Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, Núm. 7, pp. 4479-4484

  3. Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx:H/InP structures

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, Núm. 1, pp. 186-191

2000

  1. Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, Núm. 11, pp. 6212-6215

  2. Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride A1/SiNx:H/InP and A1/SiNx:H/ in0.53Ga0.47As structures by DLTS and conductance transient techniques

    Microelectronics Reliability, Vol. 40, Núm. 4-5, pp. 845-848