AT and T Bell Laboratories-ko ikertzaileekin lankidetzan egindako argitalpenak (20)

2001

  1. Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

2000

  1. Kinetic Monte Carlo simulations: An accurate bridge between ab initio calculations and standard process experimental data

    Materials Science in Semiconductor Processing, Vol. 3, Núm. 1-2, pp. 59-63

  2. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings

  3. The effect of carbon/self-interstitial clusters on carbon diffusion in silicon modeled by kinetic Monte Carlo simulations

    Materials Research Society Symposium - Proceedings, Vol. 610, pp. B7.2.1-B7.2.6

1999

  1. Activation and deactivation of implanted B in Si

    Applied Physics Letters, Vol. 75, Núm. 5, pp. 662-664

  2. B cluster formation and dissolution in Si: A scenario based on atomistic modeling

    Applied Physics Letters, Vol. 74, Núm. 24, pp. 3657-3659

  3. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

    Applied Physics Letters, Vol. 74, Núm. 14, pp. 2017-2019

1998

  1. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

  2. Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the "+1" model

    Applied Physics Letters, Vol. 73, Núm. 10, pp. 1421-1423

1997

  1. B diffusion and clustering in ion implanted Si: The role of B cluster precursors

    Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287

  2. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

  3. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050

1996

  1. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, Vol. 68, Núm. 3, pp. 409-411

  2. Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 112, Núm. 1-4, pp. 156-159

  3. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, Vol. 68, Núm. 17, pp. 2395-2397

  4. Simulations of thin film deposition from atomic and cluster beams

    Materials Science and Engineering B, Vol. 37, Núm. 1-3, pp. 1-7

1995

  1. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

    Applied Physics Letters, pp. 409

  2. Diffusion and interactions of point defects in silicon: molecular dynamics simulations

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 247-255

  3. Ion implantation and transient enhanced diffusion

    Technical Digest - International Electron Devices Meeting

  4. Simulation of cluster evaporation and transient enhanced diffusion in silicon

    Applied Physics Letters, pp. 2395