Publicaciones en las que colabora con JUAN IGNACIO JIMENEZ LOPEZ (93)

2023

  1. Comparison of Outdoor and Indoor PL and EL Images in Si Solar Cells and Panels for Defect Detection and Classification

    Journal of Electronic Materials, Vol. 52, Núm. 8, pp. 5189-5198

2020

  1. A Cathodoluminescence Study on the Diffusion Length in AlGaInP/InGaP/AlInP Solar Cell Heterostructures

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5184-5189

  2. Daylight luminescence system for silicon solar panels based on a bias switching method

    Energy Science and Engineering, Vol. 8, Núm. 11, pp. 3839-3853

  3. Electrical Activity of Crystal Defects in Multicrystalline Si

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5091-5096

2019

  1. Influence of Large Periods of DC Current Injection in c-Si Photovoltaic Panels

    Proceedings of the 36th European Photovoltaic Solar Energy Conference and Exhibition

  2. Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth

    Optical Materials Express, Vol. 9, Núm. 3, pp. 1488-1500

2018

  1. Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys

    Journal of Electronic Materials

  2. Defect characterization of UMG mc-Si solar cells using LBIC and luminescence imaging techniques

    MRS Advances

  3. Photoluminescence Imaging and LBIC Characterization of Defects in mc-Si Solar Cells

    Journal of Electronic Materials

2017

  1. Implementation of a Friendly Daylight Electroluminescence System for the Inspection of Solar PV Panels

    33rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2017)

  2. Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

    Nanotechnology, Vol. 28, Núm. 37

2016

  1. Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods

    Nanotechnology, Vol. 27, Núm. 9

  2. Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

    Superlattices and Microstructures, Vol. 99, pp. 45-53

  3. GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission

    Applied Physics Letters, Vol. 108, Núm. 10

  4. New strategies invonving upconverting nanoparticles for determining moderate temperatures by luminescence thermometry

    Journal of Luminescence, Vol. 169, pp. 711-716

2015

  1. Fully porous GaN p-n junctions fabricated by chemical vapor deposition: A green technology towards more efficient LEDs

    ECS Transactions

2014

  1. Analysis of the reduction of tensile stress by post-growth annealing methods in multicrystalline silicon wafers produced by the RST process

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, Núm. 11-12, pp. 1640-1643

  2. Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

    CrystEngComm, Vol. 16, Núm. 44, pp. 10255-10261

  3. Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition

    ACS Applied Materials and Interfaces, Vol. 6, Núm. 20, pp. 17954-17964

  4. Raman study of multicrystalline silicon wafers produced by the RST process

    Acta Physica Polonica A