JUAN JOSE BARBOLLA SANCHO-rekin lankidetzan egindako argitalpenak (9)

2005

  1. A comparative study of atomic layer deposited advanced high-k dielectrics

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    Thin Solid Films, Vol. 474, Núm. 1-2, pp. 222-229

  3. Electrical characterization of atomic-layer-deposited hafnium silicate for alternative gate dielectric application

    2005 Spanish Conference on Electron Devices, Proceedings

  4. Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

    Microelectronics Reliability

  5. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

  6. On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD

    Microelectronics Reliability

2004

  1. Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon

    Journal of Applied Physics, Vol. 96, Núm. 3, pp. 1365-1372

  2. The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon

    Semiconductor Science and Technology, Vol. 19, Núm. 9, pp. 1141-1148

2003

  1. On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2, Ta2O5 and Nb 2O5-Ta2O5-Nb2O 5 dielectric thin films

    Materials Research Society Symposium - Proceedings